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Bulletin I25196/A
ST1200C..K SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
1650A
Features
Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
case style A-24 (K-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical
ST1200C..K
1650 55 3080 25 30500 32000 4651 4250 1200 to 2000 200 - 40 to 125
Units
A C A C A A KA2s KA2s V s C
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ST1200C..K Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
12 14 ST1200C..K 16 18 20
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V DRM /V RRM , max. repetitive peak and off-state voltage V
1200 1400 1600 1800 2000
VRSM , maximum nonrepetitive peak voltage V
1300 1500 1700 1900 2100
I DRM/I RRM max.
@ TJ = TJ max
mA
100
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST1200C..K
1650 (700) 55 (85) 3080 30500 32000 25700 26900
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA s
2
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial T J = TJ max.
It
2
Maximum I t for fusing
2
4651 4250 3300 3000
I t
2
Maximum I t for fusing
2
46510 0.91
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 1.01 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV) ), TJ = TJ max. m 0.19 1.73 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV) ),TJ = TJ max. Ipk= 4000A, TJ = TJ max, t p = 10ms sine pulse
0.21
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ST1200C..K Series
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST1200C..K
1000 1.9
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 550A, TJ = TJ max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s
Typical delay time Typical turn-off time
tq
200
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of Max. peak reverse and off-state leakage current
ST1200C..K
500 off-state voltage 100
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM /VRRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST1200C..K
16 3 3.0 20
Units Conditions
W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 1.4 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.1 0.9
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, tp 5ms
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
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ST1200C..K Series
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Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
ST1200C..K
-40 to 125 -40 to 150 0.042 0.021 0.006 0.003 24500 (2500)
Units
C
Conditions
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
K/W N (Kg) g
wt
Approximate weight Case style
425 A-24 (K-PUK)
See Outline Table
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Conduction angle
180 120 90 60 30 Single Side Double Side 0.003 0.004 0.005 0.007 0.012 0.003 0.004 0.005 0.007 0.012
Rectangular conduction
Single Side Double Side 0.002 0.004 0.005 0.007 0.012 0.002 0.004 0.005 0.007 0.012 K/W
Units
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST 120
1 2
0
3
C
4
20
5
K
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) K = Puk Case A-24 (K-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
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ST1200C..K Series
Outline Table
1 (0.04) MIN. TWO PLACES 27.5 (1.08) MAX. 47.5 (1.87) DIA. MAX.
TWO PLACES
PIN RECEPTACLE AMP. 60598-1
Case Style A-24 (K-PUK)
67 (2.6) DIA. MAX.
All dimensions in millimeters (inches)
20 5 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM.
44 (1.73) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP
CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN.
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 30 60 90 120 180
Conduc tion Angle
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 400 30
S 1200C..K Series T (S ingle S ide Cooled ) RthJ-hs(DC) = 0.042 K/ W
S 1200C..K S T eries (S ingle S Cooled) ide RthJ-hs(DC) = 0.042 K/ W
Conduction Period
60 90 120 180 800 1200 DC 1600 2000
Average On-state Current (A)
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Fig. 2 - Current Ratings Characteristics
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ST1200C..K Series
Maximum Allowable Heats T ink emperature (C)
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Maximum Allowa ble Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 0 400 800 1200 1600 2000 Average On-s tate Current (A) Fig. 3 - Current Ratings Characteristics 30 60 90 120 180
Conduc tion Angle
130 120 110 100 90 80 70 60 50 40 30 20 0 30
S 1200C..K S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.021 K/W
S 1200C..K S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.021 K/ W
Conduction Period
90 60 120
180
DC
500 1000 1500 2000 2500 3000 3500 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics
Maximum Average On-state Power Loss(W)
Maximum Average On-state Power Loss (W)
4000 3500 3000 2500 2000 1500 1000 500 0 0
180 120 90 60 30 RMS Limit
5000 DC 180 120 90 60 30 RMS Limit 2000
4000
3000
Conduction Period
Conduction Angle
S 1200C..K S T eries T = 125C J 400 800 1200 1600 2000
1000
S 1200C..K S T eries T = 125C J
0 0 500 1000 1500 2000 2500 3000 3500 Average On-s tate Current (A) Fig. 6- On-state Power Loss Characteristics
Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Peak Half S Wave On-state Current (A) ine 28000 26000 24000 22000 20000 18000 16000 14000 S 1200C..K S T eries 12000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half S Wave On-state Current (A) ine
At Any Rated Load Condition And With R ated VRR Applied Following S urge. M Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
32000 30000
Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control Of Conduction May Not Be Maintained. 28000 Initial T = 125C J No Voltage Reapplied 26000 R ated VR Reapplied RM 24000 22000 20000 18000 16000 14000 12000 0.01 S 1200C..K S T eries 0.1 Pulse T rain Duration (s) 1
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
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Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
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ST1200C..K Series
10000 Instantaneous On-state Current (A)
1000
T = 25C J T = 125C J
S 1200C..K Series T 100 0.5
1
1.5
2
2.5
3
Ins tantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics T rans ient T hermal Impedance Z thJ-hs (K/ W) 0.1 S teady S tate Value R thJ-hs = 0.042 K/ W (S ingle S Cooled) ide R thJ-hs = 0.021 K/ W (Double S Cooled) ide 0.01 (DC Operation)
S 1200C..K S T eries
0.001 0.001
0.01
0.1
1
10
100
S quare Wave Pulse Duration (s ) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30%rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
(1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a)
T j=-40 C
T j=25 C
1 VGD IGD 0.1 0.001 0.01
Device: S 1200C..K S T eries 0.1 1
Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics
T j=125 C
(1) (2)
(3)
F requency Limited by PG(AV) 10 100
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